The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Dec. 11, 2017
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, Hebei, CN;
Shujie Wang, Hebei, CN;
Niefeng Sun, Hebei, CN;
Huisheng Liu, Hebei, CN;
Tongnian Sun, Hebei, CN;
Yanlei Shi, Hebei, CN;
Huimin Shao, Hebei, CN;
Xiaolan Li, Hebei, CN;
Yang Wang, Hebei, CN;
Lijie Fu, Hebei, CN;
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION, Shijiazhuang, Hebei, CN;
Abstract
The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, the device comprises a furnace body, a synthesis and crystal growth system positioned in a furnace cavity, and a heating system, a temperature measuring system, a heat preservation system and a control system matched therewith, wherein the synthesis and crystal growth system comprises a crucible and a volatile element carrier arranged on a horizontal side of the crucible, and the volatile element carrier is communicated with the crucible through an injection pipe to realize horizontal injection synthesis; the furnace body has a rotational freedom degree by means of a matched rotating mechanism, so that after the direct horizontal injection synthesis of a volatile element and a pure metal element, the entire furnace body is controlled by the rotating mechanism to slowly rotate, such that a high-purity compound semiconductor crystal is prepared through continuous VGF crystal growth after crystal synthesis, and the condition that a seed crystal is molten by the pure metal before VGF crystal growth can be avoided; and the method has characteristics of simple steps, easy operation and control, and is suitable for the industrial production of semiconductor crystals.