Hebei, China

Huimin Shao

This inventor holds 10 USPTO granted patents and 9 published patent applications and 1 EPO patent. Top assignee: The 13Th Research Institute of China Electronics Technology Group Corporation. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huimin Shao. Retrieved from https://idiyas.com/inventor/huimin-shao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 100.0

 

Average Co-Inventor Count = 9.3

ph-index = 1


Company Filing History:


Years Active: 2019-2026

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10 patents (USPTO):Explore Patents

Title: **Innovations by Huimin Shao in Semiconductor Technology**

Introduction

Huimin Shao, an esteemed inventor located in Hebei, China, has made significant contributions to the field of semiconductor technology. With a total of six patents to his name, his work primarily focuses on advancing methods for crystal growth and synthesis processes critical for electronic applications.

Latest Patents

Among Huimin Shao's latest innovations is a patent for a **Device and method for continuous VGF crystal growth through reverse injection synthesis**. This invention relates to a method and device for preparing semiconductor crystals and growing single crystals. It describes a system that efficiently facilitates the continuous growth of crystals in situ using a Vertical Gradient Freeze (VGF) method combined with reverse injection synthesis. The device features essential components, including a furnace body, crucible, heat preservation and heating systems, temperature control, and gas pressure regulation systems.

Additionally, he holds a patent for a **Process for synthesizing indium phosphide by liquid phosphorus injection method**. This innovative method addresses the synthesis of indium phosphide by converting gaseous phosphorus into a liquid state and injecting it into a molten indium solution, ensuring an instantaneous reaction. This approach not only enhances efficiency but also improves purity and allows for high-capacity production of phosphorus-rich indium phosphide polycrystals, thereby facilitating the growth of indium phosphide monocrystals.

Career Highlights

Huimin Shao's professional journey has been marked by his role at the **13th Research Institute of China Electronics Technology Group Corporation**, where he has been pivotal in research and development efforts concerning semiconductor technologies. His innovative approach and extensive knowledge in crystal growth methodologies have significantly impacted the field.

Collaborations

Collaboration plays a vital role in Huimin Shao's work. He has partnered with prominent colleagues, including Niefeng Sun and Shujie Wang, contributing to diverse projects that further the boundaries of semiconductor research. Their joint efforts have fostered an environment of innovation and creativity within their research group.

Conclusion

Huimin Shao stands out as an inventive force in the realm of semiconductor technology. With his six patents reflecting a commitment to innovation and efficiency in crystal growth processes, he continues to shape the future of materials used in electronics. His ongoing collaborations and contributions underscore the importance of teamwork and shared knowledge in advancing technological frontiers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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