The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Dec. 21, 2018
The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;
Shujie Wang, Hebei, CN;
Niefeng Sun, Hebei, CN;
Tongnian Sun, Hebei, CN;
Huisheng Liu, Hebei, CN;
Yanlei Shi, Hebei, CN;
Huimin Shao, Hebei, CN;
Lijie Fu, Hebei, CN;
Jian Jiang, Hebei, CN;
Xiaodan Zhang, Hebei, CN;
Xiaolan Li, Hebei, CN;
Yang Wang, Hebei, CN;
Abstract
The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.