Hebei, China

Yang Wang

This inventor holds 8 USPTO granted patents and 4 published patent applications and 1 EPO patent. Top assignee: The 13Th Research Institute of China Electronics Technology Group Corporation. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yang Wang. Retrieved from https://idiyas.com/inventor/yang-wang-n73zsbkp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0

 

Average Co-Inventor Count = 10.1

ph-index = 1


Company Filing History:


Years Active: 2019-2026

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8 patents (USPTO):Explore Patents

Title: Innovations of Yang Wang in Semiconductor Technology

Introduction

Yang Wang is a notable inventor based in Hebei, China, recognized for his contributions to semiconductor technology. He holds a total of six patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

One of his latest patents is a "Method for cutting substrate wafer from indium phosphide crystal bar." This invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, which belongs to the field of semiconductor substrate preparation. The process involves orientating, cutting the head and tail of a crystal bar, adjusting the orientation, and attempting to cut the crystal bar until a wafer with the required crystal orientation is achieved. The method includes multi-wire cutting to divide the crystal bar into wafers, cleaning the wafer to remove any residue, and performing circle cutting to obtain the desired crystal orientation area. This innovative approach significantly increases wafer output while reducing material loss and waste.

Another significant patent is the "Device and method for continuous VGF crystal growth through reverse injection synthesis." This invention relates to a device for preparing a semiconductor crystal and growing a single crystal. It describes a method and device for continuously growing the crystal in situ using a VGF method and reverse injection synthesis. The device comprises a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system, and a gas pressure regulation system. The design allows for efficient crystal growth and synthesis, contributing to advancements in semiconductor manufacturing.

Career Highlights

Yang Wang is affiliated with the 13th Research Institute of China Electronics Technology Group Corporation, where he applies his innovative ideas to real-world applications in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor materials and processes.

Collaborations

Yang has collaborated with notable colleagues such as Shujie Wang and Niefeng Sun, contributing to a dynamic research environment that fosters innovation and development in the field.

Conclusion

Yang Wang's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a significant inventor in the industry. His innovative methods and devices are paving the way for advancements in semiconductor manufacturing and applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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