The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Dec. 08, 2021
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Shujie Wang, Shijiazhuang, CN;
Niefeng Sun, Shijiazhuang, CN;
Yanlei Shi, Shijiazhuang, CN;
Huimin Shao, Shijiazhuang, CN;
Senfeng Xu, Shijiazhuang, CN;
Lijie Fu, Shijiazhuang, CN;
Yang Wang, Shijiazhuang, CN;
Xiaolan Li, Shijiazhuang, CN;
Xin Ou, Shijiazhuang, CN;
Ruiliang Song, Shijiazhuang, CN;
Huisheng Liu, Shijiazhuang, CN;
Tongnian Sun, Shijiazhuang, CN;
Abstract
A system and method for growing a large-size compound semiconductor single crystal belong to the field of single crystal preparation, in particular to a system and method for preparing a large-size, especially ultra-long compound semiconductor single crystal. The large-size single crystal growth system includes a crystal growth space control device and a raw material injection device within a furnace body. The raw materials are injected in the raw material synthesis and crystal growth processes, and the growth space is adjusted according to the length of the single crystal.