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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11781240 B1

PDFFull Text
Date of Patent:
Oct. 10, 2023

Filed:

Sep. 10, 2020

Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture

Applicant:

The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;

Inventors:

Niefeng Sun, Hebei, CN;

Shujie Wang, Hebei, CN;

Yanlei Shi, Hebei, CN;

Huimin Shao, Hebei, CN;

Lijie Fu, Hebei, CN;

Xiaolan Li, Hebei, CN;

Yang Wang, Hebei, CN;

Senfeng Xu, Hebei, CN;

Huisheng Liu, Hebei, CN;

Tongnian Sun, Hebei, CN;

Assignee:

THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION, Hebei, CN;

Attorney:

Enable IP, P.C.

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 15/20 (2006.01); C30B 28/10 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 15/02 (2013.01); C30B 15/20 (2013.01); C30B 28/10 (2013.01); C30B 29/40 (2013.01);
Abstract

The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.

Find Patent Forward Citations

Sun, Niefeng. (2023). Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture (U.S. Patent No. 11781240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11781240

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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