Hebei, China

Xiaodan Zhang

This inventor holds 2 USPTO granted patents. Top assignee: The 13Th Research Institute of China Electronics Technology Group Corporation. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiaodan Zhang. Retrieved from https://idiyas.com/inventor/xiaodan-zhang-bfz4mnsk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.9

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Xiaodan Zhang in Semiconductor Technology

Introduction

Xiaodan Zhang is a notable inventor based in Hebei, China, recognized for his contributions to semiconductor technology. With a total of two patents to his name, Zhang has developed innovative methods and devices that enhance the efficiency and quality of semiconductor crystal growth.

Latest Patents

Zhang's latest patents include a "Device and method for continuous VGF crystal growth through reverse injection synthesis." This invention discloses a device and method for continuously growing semiconductor crystals in situ using a VGF method and reverse injection synthesis. The device comprises a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system, and a gas pressure regulation system. The crucible is designed with a synthesis unit at its upper part and a crystal growth unit and seed crystal unit at its lower part, allowing for effective communication through capillary pores.

Another significant patent is the "Process for synthesizing indium phosphide by liquid phosphorus injection method." This method involves converting gaseous phosphorus into liquid phosphorus and injecting it into an indium melt while preventing phosphorus vaporization. The process allows for the synthesis of indium phosphide at relatively low temperatures, boasting advantages such as high efficiency, high purity, and precise proportioning.

Career Highlights

Xiaodan Zhang is affiliated with the 13th Research Institute of China Electronics Technology Group Corporation, where he applies his expertise in semiconductor technology. His work focuses on developing advanced methods for crystal growth, which are crucial for the production of high-quality semiconductor materials.

Collaborations

Zhang collaborates with several colleagues, including Shujie Wang and Niefeng Sun, who contribute to his research and development efforts in the field of semiconductor technology.

Conclusion

Xiaodan Zhang's innovative patents and contributions to semiconductor technology highlight his role as a significant inventor in the industry. His work not only advances the field but also sets a foundation for future developments in semiconductor materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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