Tokyo, Japan

Tetsuya Matsuura

USPTO Granted Patents = 17 

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 235(Granted Patents)


Location History:

  • Hyogo, JP (2003 - 2005)
  • Tokyo, JP (2002 - 2014)

Company Filing History:


Years Active: 2002-2014

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17 patents (USPTO):Explore Patents

Title: Tetsuya Matsuura: Innovator in Semiconductor Technology

Introduction

Tetsuya Matsuura is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on improving the manufacturing processes and properties of semiconductor materials.

Latest Patents

Matsuura's latest patents include a method of manufacturing a p-AlGaN layer. This method involves a two-step process where a Group V source gas and magnesium are supplied at specific flow rates to form a p-AlGaN layer. The process is repeated multiple times to achieve the desired layer characteristics. Another notable patent is for a semiconductor device and method of producing the same. This invention aims to enhance the flatness and crystallinity of functional laminates in semiconductor devices, ensuring improved performance.

Career Highlights

Throughout his career, Matsuura has worked with notable companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Matsuura has collaborated with esteemed colleagues, including Takakazu Fukumoto and Muneharu Tokunaga. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Tetsuya Matsuura's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative methods and devices continue to influence the industry and pave the way for future advancements.

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