The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jul. 02, 2013
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Yoshikazu Ooshika, Tokyo, JP;
Tetsuya Matsuura, Tokyo, JP;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlGaN layer (0≦x<1) on the buffer side, and an AlGaN adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first AlGaN layer (x−0.05≦z≦x+0.05, 0≦z<1) is provided between the buffer and the functional laminate.