Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Dowa Electronics Materials Co., Ltd.

Tetsuya Matsuura

Takakazu Fukumoto

Muneharu Tokunaga

Yasushi Kasatani

Yoshikazu Ooshika

Kazunari Michii

Yoshiyuki Kobayashi

Hajime Maeda

Tomoaki Hashimoto

Masatoshi Iwata

Norio Tasaki

Tadashi Ichimasa

The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B(0&#x3c;B) and supplying the gas containing magnesium at a flow rate C(0&#x3c;C) while supplying the Group III source gas at a flow rate A(0&#x2266;A); and a second step of supplying a Group V source gas at a flow rate B(0&#x3c;B) and supplying a gas containing magnesium at a flow rate C(0&#x3c;C) while supplying a Group III source gas at a flow rate A(0&#x3c;A). The first step and the second step are repeated a plurality of times to form a p-AlGaN (0&#x2266;x&#x3c;1) layer, and the flow rate Ais a flow rate which allows no p-AlGaN layer to grow and satisfies A&#x2266;0.5 A.

Method of manufacturing a p-AlGaN layer

To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlGaN layer (0&#x2266;x&#x3c;1) on the buffer side, and an AlGaN adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first AlGaN layer (x&#x2212;0.05&#x2266;z&#x2266;x+0.05, 0&#x2266;z&#x3c;1) is provided between the buffer and the functional laminate.

Semiconductor device and method of producing the same

A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of AlGaN (0&#x2266;x&#x2266;0.25), which further contain p-type impurity, and second layers made of AlN.

Nitride semiconductor device and method of producing the same

A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film.

Light-emitting element

Flux is supplied to the surface of each land by a flux supplying apparatus. A solder ball having a predetermined size is supplied onto a land by using a ball supplying apparatus. A memory IC is disposed on a logic IC and each of a plurality of external leads comes into contact with a predetermined position in each of a plurality of corresponding lands. By performing predetermined heat treatment, the solder ball is melted to bond each external lead and each land with each other. After that, the melted solder is cooled down, the bonded portion is formed, and a stacked semiconductor device in which the memory IC is stacked on the logic IC is completed. In such a manner, a stacked semiconductor device in which external leads of a semiconductor device body are bonded to electrodes on a substrate securely is obtained.

Method of manufacturing stacked semiconductor device

A semiconductor module includes a substrate having a pad electrode on a surface, a lower layer semiconductor package mounted on the substrate, and an upper layer semiconductor package mounted on the substrate while arranged in a position substantially overlying the former. The pad electrodes connected to the leads of these semiconductor packages are arranged alternately. The lead has a dambar residual portion. An inner surface of a lead downward portion of the upper layer semiconductor package is positioned outside an outer surface of a lead downward portion of the lower layer semiconductor package.

Semiconductor module having an upper layer semiconductor package overlying a lower layer semiconductor package

A stacked semiconductor device structure comprising: a plurality of semiconductor modules each of which includes a substrate and at least one semiconductor device mounted on the substrate; a stacking device for stacking the semiconductor modules on one another; and a surface mount device for surface mounting on a further substrate for a system appliance the semiconductor modules stacked on one another by the stacking device.

Stacked semiconductor device structure

A plurality of substrates are stacked on top of each other. A flexible cable serially connects the substrates. Semiconductor packages are mounted on the surfaces of the substrates. An adhesive material bonds adjoining semiconductor packages and holds the semiconductor packages in place with respect to each other. The bottommost substrate is provided with external leads by which the semiconductor module is mounted on the motherboard.

Semiconductor module

A semiconductor module achieving higher density of the semiconductor module itself as well as of being disposed in an area-efficient manner relative to another electronic component, such as a mother board and the like. The semiconductor module includes a mounting substrate having, on an underside, a solder ball for connecting to an interconnection of a mother board and semiconductor packages mounted in multiple layers on the top side of the mounting substrate and connected to electrodes on the mounting substrate.

Semiconductor module and electronic component

The present invention provides an inexpensive semiconductor module of large capacity capable of being formed into a small-sized semiconductor module without using any special assembling component irrespective of thickness of a semiconductor device to be packaged therein. A semiconductor module unit is formed by packaging a bump electrode of a semiconductor device in electrode pad that are disposed on upper and lower faces of a unit substrate . A mother substrate is provided with upper and lower faces on which an electrode pad of a circuit pattern is formed, and a center part in which welding balls of same diameter can be packaged. A semiconductor module unit is arranged on both faces of the mother substrate so that the semiconductor devices may be inserted back to back with a small distance between them. The unit substrate and the electrode pads of the mother substrate are conductively connected through a connection bump

Growing community of inventors

Tokyo, Japan

Tetsuya Matsuura