The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Dec. 10, 2010
Yoshikazu Ooshika, Tokyo, JP;
Tetsuya Matsuura, Tokyo, JP;
Yoshikazu Ooshika, Tokyo, JP;
Tetsuya Matsuura, Tokyo, JP;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B(0<B) and supplying the gas containing magnesium at a flow rate C(0<C) while supplying the Group III source gas at a flow rate A(0≦A); and a second step of supplying a Group V source gas at a flow rate B(0<B) and supplying a gas containing magnesium at a flow rate C(0<C) while supplying a Group III source gas at a flow rate A(0<A). The first step and the second step are repeated a plurality of times to form a p-AlGaN (0≦x<1) layer, and the flow rate Ais a flow rate which allows no p-AlGaN layer to grow and satisfies A≦0.5 A.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile