Terry Chung-Yi Chen

Title: Innovations by Terry Chung-Yi Chen

Introduction

Terry Chung-Yi Chen is a prominent inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of MOS transistors. With a total of 7 patents to his name, Chen's work has had a substantial impact on the industry.

Latest Patents

Chen's latest patents include innovative methods for manufacturing MOS transistors. One notable patent is the "Method of manufacturing MOS transistor with fluoride implantation on silicon nitride etching stop layer." This method involves providing a substrate with a gate oxide layer, a gate electrode, and spacers. A source/drain implantation is conducted to form regions in the substrate, followed by a self-aligned silicide process. The fluoride blanket implantation captures hydrogen within the silicon nitride layer, reducing free hydrogen concentration and enhancing threshold voltage stability.

Another significant patent is the "Method of manufacturing MOS transistor with fluorine implantation at a low energy." This method shares similarities with the previous one, focusing on the same substrate preparation and implantation processes. The fluorides implanted into the silicon nitride layer also serve to stabilize the threshold voltage of the MOS transistor.

Career Highlights

Throughout his career, Terry Chung-Yi Chen has worked with notable companies in the semiconductor industry, including United Microelectronics Corporation and United Silicon Incorporated. His expertise in MOS transistor technology has positioned him as a key figure in the field.

Collaborations

Chen has collaborated with esteemed colleagues such as Tong-Hsin Lee and Cheng-Chih Kung. These partnerships have furthered advancements in semiconductor technology and innovation.

Conclusion

Terry Chung-Yi Chen's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His innovative methods for manufacturing MOS transistors continue to influence the industry and pave the way for future advancements.