The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Aug. 10, 1999
Applicant:
Inventor:
Terry Chung-Yi Chen, Taipei Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A fabrication method for a copper (Cu) damascene, involving etching a part of a dielectric layer after formation of the Cu conducting wires, so that the Cu conducting wires project out from the surface of the dielectric layer. A top barrier layer is formed to prevent Cu electromigration (EM) and current leakage.