The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Sep. 03, 1999
Tong-Hsin Lee, Taipei Hsien, TW;
Terry Chung-Yi Chen, Taipei Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabrication method of a node contact opening involves forming a first insulating layer on the substrate, in which a bit line, which contacts the substrate, is formed on the first insulating layer. A conformal second insulating layer that serves as an etching stop layer is formed after the formation of bit line. A third insulating layer is then formed to isolate the subsequently formed capacitor and bit line. A pattern mask is formed on the third insulating layer, while a pattern of the pattern mask is transferred into the third insulating layer, so that an opening is formed in the third insulating layer. After the second insulating layer in the opening is removed, a spacer is formed on a sidewall of the opening. With the pattern mask and the spacer serving as an etching mask, the first insulating layer below the bit line is etched until the opening is extended through to the substrate, so that a contact opening is formed.