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For the Inventor, By the Inventor

Tainan, Taiwan

Te-Chang Hsu

This inventor holds 16 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Fabrication. Top assignees: United Microelectronics Corp., Marlin Semiconductor Limited. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Te-Chang Hsu. Retrieved from https://idiyas.com/inventor/te-chang-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 55(Granted Patents)


Company Filing History:

goldMedal13 out of 7,288 
 
United Microelectronics Corp.
 patents
silverMedal3 out of 3 
 
Marlin Semiconductor Limited
 patents

Years Active: 2018-2025

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Areas of Expertise:
Semiconductor Device
Metal Gate Transistor
Fin Field Effect Transistor
Conductive Structure
Epitaxial Layer
Double Sidewall Spacer
Dummy Gate
Fluorocarbon Flush
Crystalline Titanium Germanosilicide
Manufacturing Method
Stacked Structure
Stress Layer
16 patents (USPTO):Explore Patents
1. 12501681 - Semiconductor device and method for fabricating the same (2025-12-16),
2. 11901437 - Semiconductor device and method for fabricating the same (2024-02-13),
3. 11742412 - Method for fabricating a metal gate transistor with a stacked double sidewall spacer structure (2023-08-29),
4. 11355619 - Semiconductor device and method for fabricating the same (2022-06-07),
5. 10957762 - Manufacturing method of semiconductor device including conductive structure (2021-03-23),
6. 10892365 - Fin field effect transistor having crystalline titanium germanosilicide stressor layer (2021-01-12),
7. 10777657 - Metal gate transistor with a stacked double sidewall spacer structure (2020-09-15),
8. 10700163 - Semiconductor device including conductive structure and manufacturing method thereof (2020-06-30),
9. 10651290 - Semiconductor device and method for fabricating the same (2020-05-12),
10. 10608113 - Semiconductor structure and fabrication method thereof (2020-03-31),
11. 10283415 - Semiconductor structure with a bump having a width larger than a width of fin shaped structures and manufacturing method thereof (2019-05-07),
12. 10249729 - Method for fabricating metal replacement gate semiconductor device using dummy gate and composite spacer structure (2019-04-02),
13. 10211314 - Semiconductor device and method for fabricating the same (2019-02-19),
14. 10211107 - Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean step (2019-02-19),
15. 10109531 - Semiconductor structure having a bump lower than a substrate base and a width of the bump larger than a width of fin shaped structures, and manufacturing method thereof (2018-10-23),

Title: Te-Chang Hsu: Trailblazing Inventor in the Technology Sector

Introduction: Te-Chang Hsu, a dedicated innovator hailing from Tainan, Taiwan, has made significant strides in the field of technology with her passion for creating sustainable solutions. With 15 patents to her name, she continues to push boundaries and pave the way for the future of innovation.

Latest Patents:

1. "Semiconductor device and method for fabricating the same": This patent showcases a semiconductor device with a unique gate structure and spacer design, emphasizing the importance of dielectric constants to enhance performance.

2. "Method for fabricating a metal gate transistor with a stacked double sidewall spacer structure": This patent highlights a novel method for fabricating semiconductor devices, demonstrating Te-Chang Hsu's expertise in advanced manufacturing techniques.

Career Highlights: Te-Chang Hsu's impressive career includes collaborations with renowned companies such as United Microelectronics Corp. and Marlin Semiconductor Limited. Her innovative approach and commitment to excellence have led to groundbreaking advancements in the semiconductor industry.

Collaborations: Throughout her career, Te-Chang Hsu has collaborated with talented individuals such as Yao-Jhan Wang and Chun-Chia Chen. Together, they have worked on cutting-edge projects that have reshaped the technological landscape.

Conclusion: Te-Chang Hsu's unwavering dedication to innovation, coupled with her exceptional talent, has solidified her position as a trailblazing inventor in the technology sector. Her contributions continue to inspire and pave the way for future generations of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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