The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Sep. 10, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Yi Wang, Tainan, TW;
Tien-Shan Hsu, Tainan, TW;
Yu-Chih Su, Tainan, TW;
Chi-Hsuan Cheng, Kaohsiung, TW;
Cheng-Pu Chiu, New Taipei, TW;
Te-Chang Hsu, Tainan, TW;
Chin-Yang Hsieh, Tainan, TW;
An-Chi Liu, Tainan, TW;
Kuan-Lin Chen, Changhua County, TW;
Yao-Jhan Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.