The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Sep. 20, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Te-Chang Hsu, Tainan, TW;
Chun-Chia Chen, Tainan, TW;
Yao-Jhan Wang, Tainan, TW;
Chun-Jen Huang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/28247 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/823821 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.