The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 16, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Te-Chang Hsu, Tainan, TW;
An-Chi Liu, Tainan, TW;
Nan-Yuan Huang, Tainan, TW;
Yu-Chih Su, Tainan, TW;
Cheng-Pu Chiu, New Taipei, TW;
Tien-Shan Hsu, Tainan, TW;
Chih-Yi Wang, Tainan, TW;
Chi-Hsuan Cheng, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/3085 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01);
Abstract
A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.