Tokyo, Japan

Tatsunori Yanagimoto

This inventor holds 8 USPTO granted patents and 6 published patent applications. Top assignees: Mitsubishi Electric Corporation, Tanaka Electronics Co., Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsunori Yanagimoto. Retrieved from https://idiyas.com/inventor/tatsunori-yanagimoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8 

% Patents Active = 50.0

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Tokyo, JP (2016 - 2021)
  • Chiyoda-ku, JP (2022)

Company Filing History:


Years Active: 2016-2026

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8 patents (USPTO):Explore Patents

Title: Innovations by Tatsunori Yanagimoto

Introduction

Tatsunori Yanagimoto is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of power semiconductor technology. With a total of 8 patents to his name, Yanagimoto continues to push the boundaries of innovation in his industry.

Latest Patents

Yanagimoto's latest patents include a power semiconductor module and a power conversion device. These inventions focus on creating small-sized components that effectively reduce ringing voltage. The power semiconductor module features a positive electrode-side switching element and a corresponding freewheeling diode, along with a negative electrode-side counterpart. Additionally, the design incorporates a positive electrode conductor pattern, a negative electrode conductor pattern, and an AC electrode pattern. A unique snubber substrate, which includes an insulating substrate with a snubber circuit, is also part of this innovative module.

Another notable patent is a semiconductor device and its manufacturing method. This device includes a first and second main electrode positioned on opposite surfaces of a semiconductor substrate. A protective film is strategically placed on the edge of the first main electrode, while a first metal film is located within the region enclosed by this protective film. The design ensures that the film thickness varies, being larger at the center than at the edges, and features surface irregularities that enhance its functionality.

Career Highlights

Yanagimoto is associated with Mitsubishi Electric Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the company's capabilities in power electronics.

Collaborations

He has collaborated with notable colleagues such as Masao Kikuchi and Junji Fujino, contributing to various projects that enhance the company's technological offerings.

Conclusion

Tatsunori Yanagimoto's innovative work in power semiconductor technology exemplifies his commitment to advancing the field. His patents reflect a deep understanding of the complexities involved in semiconductor design and manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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