The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Nov. 21, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 29/16 (2013.01); H01L 24/49 (2013.01); H01L 2224/03442 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A semiconductor device of the present invention includes a first main electrode and a second main electrode respectively disposed on a first main surface and a second main surface of a semiconductor substrate, a protective film disposed on an edge part of the first main electrode; and a first metal film disposed in a region enclosed by the protective film on the first main electrode. The first metal film has a film thickness at a central portion larger than that at a part in contact with the protective film, and has irregularities on a surface thereof.