Tatsuhiko Miura

Title: Innovations of Tatsuhiko Miura in Semiconductor Technology

Introduction

Tatsuhiko Miura is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving manufacturing methods for semiconductor devices, particularly in the area of MOSFETs.

Latest Patents

One of Miura's latest patents involves a manufacturing method of a semiconductor device that utilizes a tungsten-based barrier metal film. This film is used as an aluminum-diffusion barrier metal film below an aluminum source electrode to enhance the properties of the Schottky Barrier Diode (SBD). The invention highlights that a tungsten-based barrier metal film, formed by sputtering, can lead to the generation of aluminum spikes in a silicon substrate. The method involves forming the lower layer by ionization sputtering while applying a bias to the wafer side, and the upper layer is formed without applying a bias. Another patent focuses on the manufacturing steps of a power-type semiconductor device, where a metal film is deposited over the back surface of the semiconductor wafer in a preheated state. This process is conducted within an annular susceptor designed to hold the wafer securely during processing.

Career Highlights

Tatsuhiko Miura is currently employed at Renesas Electronics Corporation, where he continues to innovate in semiconductor manufacturing techniques. His expertise has led to advancements that enhance the efficiency and reliability of semiconductor devices.

Collaborations

Miura has collaborated with notable coworkers, including Katsuhiro Mitsui and Daisuke Ono, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Tatsuhiko Miura's work in semiconductor technology exemplifies the innovative spirit of modern inventors. His patents reflect a deep understanding of materials and processes that are crucial for the advancement of electronic devices.