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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9177813 B1

PDFFull Text
Expired
Date of Patent:
Nov. 03, 2015

Filed:

Mar. 19, 2010

Manufacturing method of semiconductor device

Applicant:

Tatsuhiko Miura, Tokyo, JP;

Inventor:

Tatsuhiko Miura, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

David E Graybill

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/285 (2006.01); C23C 14/16 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2855 (2013.01); C23C 14/165 (2013.01); H01L 21/28518 (2013.01); H01L 21/76846 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 23/53223 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/456 (2013.01); H01L 29/47 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01); H01L 27/0255 (2013.01); H01L 29/0696 (2013.01); H01L 29/42372 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In MOSFET having SBD as a protection element, a TiW (alloy having tungsten as a main component) film is used as an aluminum-diffusion barrier metal film below an aluminum source electrode in order to secure properties of SBD. The present inventors have found that a tungsten-based barrier metal film is in the form of columnar grains having a lower barrier property than that of a titanium-based barrier metal film such as TiN so that aluminum spikes are generated relatively easily in a silicon substrate. In the present invention, when a tungsten-based barrier metal film is formed by sputtering as a barrier metal layer between an aluminum-based metal layer and a silicon-based semiconductor layer therebelow, the lower layer is formed by ionization sputtering while applying a bias to the wafer side and the upper layer is formed by sputtering without applying a bias to the wafer side.

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Miura, Tatsuhiko. (2015). Manufacturing method of semiconductor device (U.S. Patent No. 9177813). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9177813

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