The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
May. 06, 2009
Yoshihiro Kainuma, Tokyo, JP;
Tatsuhiko Miura, Tokyo, JP;
Takashi Sato, Tokyo, JP;
Katsuhiro Mitsui, Tokyo, JP;
Daisuke Ono, Tokyo, JP;
Yoshihiro Kainuma, Tokyo, JP;
Tatsuhiko Miura, Tokyo, JP;
Takashi Sato, Tokyo, JP;
Katsuhiro Mitsui, Tokyo, JP;
Daisuke Ono, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.