Columbia, SC, United States of America

Tangali S Sudarshan

USPTO Granted Patents = 18 

 

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 59(Granted Patents)


Company Filing History:


Years Active: 1988-2023

Loading Chart...
Loading Chart...
18 patents (USPTO):Explore Patents

Title: Innovations by Inventor Tangali S. Sudarshan

Introduction

Tangali S. Sudarshan, an eminent inventor based in Columbia, SC, is known for his remarkable contributions to the field of materials science, particularly in the area of graphene and silicon carbide (SiC) technologies. With a portfolio of 18 patents, his work demonstrates significant advancements that hold the potential to impact various industries including electronics and materials engineering.

Latest Patents

Among his latest innovations, Tangali S. Sudarshan has developed a patent titled "Defect engineered high quality multilayer epitaxial graphene growth with thickness controllability." This method focuses on forming a graphene film on silicon carbide materials. The approach includes heating the silicon carbide to temperatures between approximately 1,000°C to 2,200°C, followed by exposure to a growth atmosphere enriched with halogen species. These halogen species react with the silicon carbide, effectively removing silicon from the material, facilitating the high-quality growth of graphene.

Another noteworthy patent is the "Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition." This method involves positioning a substrate within a hot wall CVD (Chemical Vapor Deposition) chamber, where fluorine atoms, carbon atoms, and silicon atoms are combined through the introduction of at least two source gases. This innovative process significantly enhances the quality of SiC epilayers on the substrate surface.

Career Highlights

Tangali S. Sudarshan's career includes influential positions at renowned institutions and companies such as the University of South Carolina and Cree GmbH. His work at these establishments has been pivotal in advancing research and technology in materials science, especially concerning graphene and SiC wafers.

Collaborations

Throughout his career, Tangali has collaborated with several prominent researchers, including Tawhid Rana and Haizheng Song. These collaborations have further propelled his research efforts and enhanced the development of innovative technologies in his field.

Conclusion

Tangali S. Sudarshan stands out as a leading inventor with significant contributions that continue to shape the landscape of materials science. His ongoing research and patented innovations reflect his dedication to pushing the boundaries of technology, particularly in the development of advanced materials like graphene and silicon carbide. As his work progresses, Tangali's contributions promise to provide essential advancements that could benefit various industries and applications in the future.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…