The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Nov. 20, 2012
Applicant:
University of South Carolina, Columbia, SC (US);
Inventors:
Tangali S. Sudarshan, Columbia, SC (US);
Haizheng Song, Columbia, SC (US);
Tawhid Rana, Columbia, SC (US);
Assignee:
University of South Carolina, Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); C30B 25/14 (2006.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 25/183 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02019 (2013.01); H01L 21/0262 (2013.01); H01L 21/02082 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02516 (2013.01); H01L 21/02529 (2013.01); H01L 21/02658 (2013.01); H01L 21/30608 (2013.01); H01L 29/1608 (2013.01);
Abstract
Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall CVD chamber (e.g., onto a susceptor within the CVD chamber). At least two source gases can then be introduced into the hot wall CVD chamber such that, upon decomposition, fluorine atoms, carbon atoms, and silicon atoms are present within the CVD chamber. The epilayer comprising SiC can then be grown on the surface of the substrate in the presence of the fluorine atoms.