The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Dec. 02, 2014
Applicant:
University of South Carolina, Columbia, SC (US);
Inventors:
Tangali S. Sudarshan, Columbia, SC (US);
Haizheng Song, Columbia, SC (US);
Tawhid Rana, Columbia, SC (US);
Assignee:
University of South Carolina, Columbia, SC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); C30B 25/14 (2006.01); C30B 25/16 (2006.01); C30B 29/36 (2006.01); C30B 25/20 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 25/183 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02019 (2013.01); H01L 21/0262 (2013.01); H01L 21/02082 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02516 (2013.01); H01L 21/02529 (2013.01); H01L 21/02658 (2013.01); H01L 21/30608 (2013.01); H01L 29/1608 (2013.01);
Abstract
Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface.