The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Feb. 14, 2014
Applicant:

University of South Carolina, Columbia, SC (US);

Inventors:

Tangali S. Sudarshan, Columbia, SC (US);

Tawhid Rana, Columbia, SC (US);

MVS Chandrashekhar, Columbia, SC (US);

Assignee:

University of South Carolina, Columbia, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); C30B 1/10 (2006.01); C01B 32/188 (2017.01); C30B 1/02 (2006.01); C30B 29/02 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C30B 1/10 (2013.01); C01B 32/188 (2017.08); C30B 1/02 (2013.01); C30B 29/02 (2013.01); B82Y 30/00 (2013.01); C01B 2204/04 (2013.01); Y10T 428/30 (2015.01);
Abstract

Methods for forming a graphene film on a silicon carbide material are provided, along with the resulting coated materials. The method can include: heating the silicon carbide material to a growth temperature (e.g., about 1,000° C. to about 2,200° C.), and exposing the silicon carbide material to a growth atmosphere comprising a halogen species. The halogen species reacts with the silicon carbide material to remove silicon therefrom. The halogen species can comprise fluorine (e.g., SiF, etc.), chlorine (e.g., SiCl), or a mixture thereof.


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