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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8574528 B1

PDFFull Text
Expired
Date of Patent:
Nov. 05, 2013

Filed:

Sep. 07, 2010

Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime

Applicants:

Tangali S. Sudarshan, Columbia, SC (US);

Amitesh Srivastava, Hillsboro, OR (US);

Inventors:

Tangali S. Sudarshan, Columbia, SC (US);

Amitesh Srivastava, Hillsboro, OR (US);

Assignee:

University of South Carolina, Columbia, SC (US);

Attorney:

Dority & Manning, P.A.

Primary Examiner:

Guinever Gregorio

Int. Cl.
CPC ...
C01B 31/36 (2006.01); C01B 33/00 (2006.01); C01B 21/068 (2006.01); C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01); C30B 28/14 (2006.01); H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.

Find Patent Forward Citations

Sudarshan, Tangali. (2013). Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime (U.S. Patent No. 8574528). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8574528

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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