Company Filing History:
Years Active: 2013-2017
Title: Innovations by Amitesh Srivastava
Introduction
Amitesh Srivastava is an accomplished inventor based in Hillsboro, OR (US). He has made significant contributions to the field of silicon carbide epitaxial layer growth, holding 2 patents that showcase his innovative methods.
Latest Patents
His latest patents focus on methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime. The method involves heating the substrate in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas. Subsequently, the epitaxial layer is grown on the substrate at the growth temperature. Finally, the substrate is cooled in the chemical vapor deposition chamber to at least about 80% of the growth temperature while still in the presence of a carbon source gas. Substrates formed from this method can achieve a carrier lifetime between about 0.25 µs and about 9.9 µs.
Career Highlights
Amitesh Srivastava is currently affiliated with the University of South Carolina, where he continues to advance his research and innovations in the field of materials science.
Collaborations
He collaborates with Tangali S Sudarshan, contributing to the development of cutting-edge technologies in silicon carbide applications.
Conclusion
Amitesh Srivastava's work in silicon carbide epitaxial layer growth represents a significant advancement in the field, demonstrating his commitment to innovation and research excellence.