The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Dec. 11, 2013
Applicants:

Cree, Inc., Durham, NC (US);

The University of South Carolina, Columbia, SC (US);

Inventors:

Qingchun Zhang, Cary, NC (US);

Anant K. Agarwal, Chapel Hill, NC (US);

Tangali S. Sudarshan, Columbia, SC (US);

Alexander Bolotnikov, Niskayuna, NY (US);

Assignees:

Cree, Inc., Durham, NC (US);

The University of South Carolina, Columbia, SC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 21/223 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/36 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0465 (2013.01); H01L 21/223 (2013.01); H01L 29/0615 (2013.01); H01L 29/0657 (2013.01); H01L 29/0661 (2013.01); H01L 29/36 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract

An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×10cm.


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