Tokyo, Japan

Tamotsu Usami

USPTO Granted Patents = 16 

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 137(Granted Patents)


Location History:

  • Yamanashi, JA (1976)
  • Kokubunji-Shi Tokyo, JP (2002)
  • Kokubunji-shi, Tokyo, JP (2002 - 2009)
  • Kokubunji, JP (1985 - 2012)

Company Filing History:

goldMedal5 out of 4,979 
 
Oki Electric Industry Co., Ltd.
 patents
silverMedal5 out of 8,782 
 
Sanyo Electric Co., Ltd.
 patents
bronzeMedal5 out of 52,766 
 
Kabushiki Kaisha Toshiba
 patents
45 out of 35,756 
 
Nec Corporation
 patents
55 out of 25,577 
 
Sharp Kabushiki Kaisha Corporation
 patents
65 out of 3,781 
 
Renesas Technology Corp.
 patents
75 out of 39,245 
 
Fujitsu Corporation
 patents
85 out of 6,017 
 
Rohm Co., Ltd.
 patents
94 out of 58,132 
 
Sony Corporation
 patents
104 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
113 out of 42,517 
 
Hitachi, Ltd.
 patents
121 out of 33 
 
Matsushita Electric Industrial
 patents
131 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
141 out of 1 
 
Sony Corporatoin
 patent
151 out of 193 
 
Toshiba Corporation
 patents
161 out of 707 
 
Oki Semiconductor Co., Ltd.
 patents
171 out of 467 
 
Fujitsu Microelectronics Limited
 patents
181 out of 16,453 
 
Panasonic Corporation
 patents
191 out of 6,667 
 
Kyocera Corporation
 patents
201 out of 11,665 
 
Fuji Xerox Co., Ltd.
 patents
211 out of 1 
 
Jjtech Co., Ltd.
 patent
2212 out of 832,912 
Other
 patents
where one patent can have more than one assignee

Years Active: 1976-2012

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16 patents (USPTO):Explore Patents

Title: The Innovations of Tamotsu Usami

Introduction

Tamotsu Usami is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Usami's latest patents is for a high-speed semiconductor device and method for manufacturing the same. This invention discloses a semiconductor device designed to increase the switching speed of a transistor. The device comprises a semiconductor layer formed on part of an insulating layer, a first transistor with a first gate insulating film, a first gate electrode, and two first impurity layers forming a source and a drain. Additionally, a second transistor is formed on another lateral face of the semiconductor layer, featuring a second gate insulating film, a second gate electrode, and two second impurity layers forming a source and a drain. Another notable patent is for a method of manufacturing a wiring substrate with terminated buses. This method involves providing a terminal resistor at the end of a bus on a wiring substrate, along with an insulator that has a large dielectric loss angle to absorb high-frequency electromagnetic waves. This arrangement allows for the successful transmission of digital signals in the GHz region using a conventional terminal resistor.

Career Highlights

Throughout his career, Usami has worked with various companies, including Oki Electric Industry Co., Ltd. His innovative work has positioned him as a key figure in the semiconductor industry, contributing to advancements that have a lasting impact on technology.

Collaborations

Usami has collaborated with notable individuals in his field, including Kanji Otsuka. These collaborations have further enriched his work and expanded the scope of his inventions.

Conclusion

Tamotsu Usami's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His innovative approaches continue to influence the industry and pave the way for future advancements.

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