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Toshiba Corporation

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USPTO Granted Patents = 193

% Expired Patents = 34.7

CIPO Patents = 1

EPO Patents = 3

Forward Citations = 2,169

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379 inventors (with patents filed for the assignee):

Amir Shahindoust (14 out of 25 patents)

Arvind Pruthi (8 out of 19 patents)

Truc Ngoc Nguyen (7 out of 24 patents)

4. Andrey I Savov (6 out of 14 patents)

5. Vincent Wu (6 out of 14 patents)

6. Man Mohan Garg (6 out of 14 patents)

7. Michael Lee Yeung (6 out of 40 patents)

8. Girish R Krishna (5 out of 6 patents)

9. Joseph C Bentz (5 out of 11 patents)

10. John T Carroll, Iii (4 out of 41 patents)

11. William C Kress (4 out of 15 patents)

12. Marianne L Kodimer (4 out of 65 patents)

13. William Su (3 out of 37 patents)

14. Philip Rose (3 out of 17 patents)

15. Nobuo Kobayashi (3 out of 18 patents)

Core Competencies:

Solid-State Drives

Memory Systems

High Electron Mobility Transistor

Data Management

Cache Coherency

Battery Technology

Video Transmission

Document Processing

Doping Layers

Power Conversion

Electrolytic Processes

Optical Discs

193 patents: Sort by Forward Citations

1. 10224519 - Secondary battery and method of manufacturing the same (2019-03-05),

2. 9735240 - High electron mobility transistor (HEMT) (2017-08-15),

3. 9727310 - Entropy source for random number generator (2017-08-08),

4. 9720860 - System and method for efficient processing of queued read commands in a memory system (2017-08-01),

5. 9710420 - System and method for improving the efficiency of a serial interface protocol (2017-07-18),

6. 9679762 - Access conductivity enhanced high electron mobility transistor (2017-06-13),

7. 9658669 - Solid-state mass storage devices with capacitor-based power supply and methods of operation (2017-05-23),

8. 9653556 - Field plate for high-voltage field effect transistors (2017-05-16),

9. 9652164 - Solid-state mass storage device and method for processing forced unit access write commands (2017-05-16),

10. 9617656 - Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow (2017-04-11),

11. 9608103 - High electron mobility transistor with periodically carbon doped gallium nitride (2017-03-28),

12. 9606915 - Pool level garbage collection and wear leveling of solid state devices (2017-03-28),

13. 9585243 - Circuit boards and methods of identification and manufacturing thereof (2017-02-28),

14. 9558839 - Power fail saving modes in solid state drive with MLC memory (2017-01-31),

15. 9553483 - System and method for limiting inrush current in solid state drives (2017-01-24),

Company Overview

Toshiba Corporation, headquartered in Tokyo, Japan, is a prominent player in the field of solid-state storage technology. The company specializes in the development and manufacturing of solid-state drives and advanced memory systems, catering to a wide range of applications. Toshiba's expertise extends to high electron mobility transistors, data management solutions, cache coherency, and innovative battery technologies. Additionally, the organization is involved in video transmission and document processing, contributing to various sectors with its cutting-edge technological advancements.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 10 2026

193 Patents

#361 in Tokyo

#722 in Japan

#4,368 in the World

Toshiba Corporation

Forward Citations = 2,169

379 inventors:

Amir Shahindoust (14 out of 25 patents)

Arvind Pruthi (8 out of 19 patents)

Truc Ngoc Nguyen (7 out of 24 patents)

4. Andrey I Savov (6 out of 14 patents)

5. Vincent Wu (6 out of 14 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Toshiba Corporation. Retrieved from https://idiyas.com/company/toshiba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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