The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Feb. 20, 2004
Kanji Otsuka, Higashiyamato-shi, Tokyo, JP;
Tamotsu Usami, Kokubunji-shi, Tokyo, JP;
Kanji Otsuka, Higashiyamato-shi, Tokyo, JP;
Tamotsu Usami, Kokubunji-shi, Tokyo, JP;
Other;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Sony Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
An electronic circuit device having a power-supply structure capable of supporting fast signals in and above a GHz band is offered. A driver transistor is formed in a surface of a semiconductor substrate. Power-supply/ground pair transmission lines which provide the driver transistor with power and signal/ground pair transmission lines which transmit signals to a receiver are formed on the semiconductor substrate. The power-supply/ground pair transmission lines are connected to a drain layer of the driver transistor and a Player in a P well. The signal/ground pair transmission lines are connected to a source layer of the driver transistor and a Player in the P well.