Other

Kabushiki Kaisha Toshiba

Fujitsu Corporation

Nec Corporation

Sharp Kabushiki Kaisha Corporation

Sanyo Electric Co., Ltd.

Rohm Co., Ltd.

Oki Electric Industry Co., Ltd.

Sony Corporation

Matsushita Electric Industrial Co., Ltd.

Hitachi, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Fuji Xerox Co., Ltd.

Kyocera Corporation

Tamotsu Usami

Kanji Otsuka

Yutaka Akiyama

Yuji Shirai

Yasuyuki Yamasaki

Munekazu Takano

Fumio Mizuno

Tadatomo Suga

Disclosed is a semiconductor device wherein the switching speed of a transistor is increased. Specifically disclosed is a semiconductor device comprising a semiconductor layer formed on a part of an insulating layer, a first transistor formed on a lateral face of the semiconductor layer and having a first gate insulating film, a first gate electrode and two first impurity layers forming a source and a drain, and a second transistor formed on another lateral face of the semiconductor layer and having a second gate insulating film, a second gate electrode and two second impurity layers forming a source and a drain.

High-speed semiconductor device and method for manufacturing the same

A terminal resistor is provided at the end of a bus formed on a wiring substrate. An insulator having a large dielectric loss angle is provided in the vicinity of the terminal resistor to absorb high frequency electromagnetic waves in the vicinity. This arrangement permits successful transmission of digital signals in the GHz region using a conventional terminal resistor.

Method of manufacturing wiring substrate having terminated buses

An impedance conversion device has four conductors arranged so that the first and second conductors form a transmission line having a first characteristic impedance, the third and fourth conductors form a transmission line having the first characteristic impedance, the first and third conductors form a transmission line having a second characteristic impedance, and the second and fourth conductors form a third transmission line having the second characteristic impedance. The second and fourth conductors are interconnected at proximate ends through a resistance equal to the first characteristic impedance. The third and fourth conductors are interconnected at proximate ends through a resistance equal to the second characteristic impedance. The lateral dimensions of the impedance conversion device are small enough to permit insertion in a stacked pair line.

Narrow impedance conversion device

To transmit a high-speed digital signal of several tens GHz via a differential line by connecting a differential line referring to the ground to differential lines not referring to the ground, there is provided a signal transmission system which transmits a digital signal between circuit blocks via a signal transmission line, each of the circuit blocks basically including a functional circuit, a reception/transmission circuit formed separately from the functional circuit and an impedance-matched transmission line () formed between reception and transmission ends of the reception/transmission circuit; a differential line () referring to the ground (), led out from a differential output driver, being formed from differential signal lines disposed symmetrically with respect to the ground () in the circuit block, only differential pair lines () not referring to the ground being extended directly from the differential signal lines disposed symmetrically with respect to the ground in the signal transmission line ().

Signal transmission system, and signal transmission line

Signal transmission technology for transmitting 20&#x2013;50 GHz band digital high speed signals, while keeping to the system structure and element structure of the prior art is provided. A signal transmission system is provided in which the driver and the receiver comprise the logic circuit and the memory circuit for a transistor extending an entire electronic circuit, and wherein the driver is connected to the receiver via a signal transmission line, and to the power source Vdd via the power source/ground transmission line, and the receiver circuits and the driver and receiver all have substantially differential input and differential output, and at the output terminal of the substantially differential output of the driver there are no connections to a power source or a ground and the receiver receives signals by detecting potential difference of a substantially differential input signal and there are no distribution wires in the signal transmission lines.

Signal transmission system

Method of terminating bus, bus termination resistor, and wiring substrate having terminated buses and method of its manufacture

A bypass capacitor having a given capacitance is arranged on the power/ground line adjacently to a driver circuit in a chip to reduce an effect of transient phenomenon at switching. The capacitance of the bypass capacitor is preset so as to be larger than a parasitic capacitance of the driver circuit to prevent the characteristic impedance of the power/ground line from being higher than the characteristic impedance of internal wiring.

Circuit structure and semiconductor integrated circuit

An electronic circuit device having a power-supply structure capable of supporting fast signals in and above a GHz band is offered. A driver transistor is formed in a surface of a semiconductor substrate. Power-supply/ground pair transmission lines which provide the driver transistor with power and signal/ground pair transmission lines which transmit signals to a receiver are formed on the semiconductor substrate. The power-supply/ground pair transmission lines are connected to a drain layer of the driver transistor and a Player in a P well. The signal/ground pair transmission lines are connected to a source layer of the driver transistor and a Player in the P well.

Electronic circuit device

An electronic device having a current switch type driver is provided. The current switch type driver includes a differential circuit that supplies a current to a transmission channel according to a signal. In the electronic device, a signal wire that transmits the signal to the differential circuit has a transmission channel structure.

Electronic device

A CMOS line driver is made up of p- and nMOS transistors. A pMOS varactor is interposed between the source of the pMOS transistor and a power supply, while an nMOS varactor is interposed between the source of the nMOS transistor and ground. The sizes of each of these MOS varactors may be the same as those of the p- or nMOS transistor. Alternatively, each of these MOS varactors may have a channel area twice greater than that of the p- or nMOS transistor. The inverted version of a signal input to the line driver is supplied to the gates of the MOS varactors. In this manner, the MOS transistors, making up the line driver, can switch at a high speed.

Semiconductor integrated circuit having switching transistors and varactors

Signal wirings are formed on a pair of substrates , and the substrates are joined together through an insulating layer so that the signal wirings are placed in parallel and facing to each other. The surfaces of the overlapping faces of the signal wirings are made smooth, and the roughness of the same surfaces is smaller than the skin depth &dgr; due to the skin effect, preferably less than one third, for minimizing the increase in the electric resistance due to the skin effect.

Wiring substrate

In a semiconductor chip are arranged power pads, ground pads and signal pads. A ground line is provided which is formed as one in the vicinity of the chip and branches off at some distance from the chip. Signal lines and power lines are each formed over one of the branched ground lines. The signal lines and the power lines are extended radially together with the underlying ground lines. Each of the signal lines and the power lines are extended together with the corresponding ground line to form a stacked pair line.

Semiconductor circuit device having power and ground lines adapted for high-frequency operation

Signal wirings are formed on a pair of substrates and the substrates are joined together through an insulating layer so that the signal wirings are placed in parallel and facing to each other. The surfaces of the overlapping faces of the signal wirings are made smooth, and the roughness of the same surfaces is smaller than the skin depth &dgr; due to the skin effect, preferably less than one third, for minimizing the increase in the electric resistance due to the skin effect.

Wiring substrate and process for producing the same

An electronic device which improves speed of signal transmission in a bus wiring system by specifying circuit configuration of a driver circuit and transmission line characteristic impedance. An input/output circuit combines a differential driver of current switch type with a bus wiring system having a transmission line for transmitting a differential complementary digital signal and a termination end resistor matching the transmission line. An integrated circuit chip including the differential driver is mounted on a wiring board including the transmission line and the termination end resistor. The transmission line includes wires having an equal length which have characteristic impedance of 25&OHgr; or less. In combination with the current switch type differential driver, this transmission line structure restricts attenuation of signal energy during transmission and restricts electromagnetic interference between transmission lines close to each other.

Electronic device capable of greatly improving signal transmission speed in a bus wiring system

A wire bonding apparatus which can variously change the shape of a loop of a bonding wire and can restrict the loop shape in accordance with specifications of an article being wire bonded. In the wire bonding apparatus, a wire guide unit moving both vertically and transversely, independently of a bonding tool, is disposed in proximity of the bonding tool which moves relative to the article to be wire bonded and which connects the wire between a first bonding region and the second bonding region. A mechanism is provided which changes the shape of the loop of the bonding wire when the wire guide unit moves vertically and transversely.

Growing community of inventors

Tokyo, Japan

Tamotsu Usami