The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Aug. 01, 2006
Kanji Otsuka, Higashiyamato, JP;
Fumio Mizuno, Hino, JP;
Munekazu Takano, Hino, JP;
Tamotsu Usami, Kokubunji, JP;
Kanji Otsuka, Higashiyamato, JP;
Fumio Mizuno, Hino, JP;
Munekazu Takano, Hino, JP;
Tamotsu Usami, Kokubunji, JP;
Jjtech Co., Ltd., Kanagawa, JP;
Abstract
Disclosed is a semiconductor device wherein the switching speed of a transistor is increased. Specifically disclosed is a semiconductor device comprising a semiconductor layer formed on a part of an insulating layer, a first transistor formed on a lateral face of the semiconductor layer and having a first gate insulating film, a first gate electrode and two first impurity layers forming a source and a drain, and a second transistor formed on another lateral face of the semiconductor layer and having a second gate insulating film, a second gate electrode and two second impurity layers forming a source and a drain.