Kyoto, Japan

Takeshi Uenoyama

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1996-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Uenoyama. Retrieved from https://idiyas.com/inventor/takeshi-uenoyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 5.0

ph-index = 12

Forward Citations = 712(Granted Patents)


Location History:

  • Tsuzuki-gun, JP (2000)
  • Kyotanabe, JP (2003)
  • Kyoto, JP (1996 - 2008)

Company Filing History:


Years Active: 1996-2008

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Areas of Expertise:
Semiconductor Light Emitting Element
Semiconductor Device
MISFET
SiGeC-based CMOSFET
High-Temperature Applications
Dielectric Film
Electron Device
Heterojunction Channel
Optical Disk Apparatus
Magnetoresistive Element
Bistable Memory Device
Laser Device
25 patents (USPTO):Explore Patents

Title: Takeshi Uenoyama: Pioneering Innovations in Semiconductor Technology

Introduction:

Takeshi Uenoyama is a visionary inventor based in Kyoto, Japan, who has dedicated his career to pushing the boundaries of technology and making groundbreaking contributions to the field of semiconductor devices. With an impressive portfolio of 25 patents, Uenoyama is renowned for his relentless pursuit of innovation and his commitment to advancing the world of technology.

Latest Patents:

Among his latest patents, Uenoyama has introduced revolutionary concepts in semiconductor technology. One of his notable inventions is the "Semiconductor light emitting element and method for fabricating the same," which involves the creation of a semiconductor laser with an active layer made of a hexagonal-system compound semiconductor. This innovation generates anisotropic strain in the active layer, enhancing the performance of the semiconductor device.

Another significant patent by Uenoyama is the "Semiconductor device having an active region of alternating layers," where he proposes an active region composed of undoped layers and n-type doped layers on a substrate such as SiC, GaN, or GaAs. This unique design enables carriers to spread out into the undoped layers, leading to high carrier mobility and enhanced performance in semiconductor devices.

Career Highlights:

Takeshi Uenoyama is a key figure in the research and development team at Matsushita Electric Industrial Co., Ltd., a leading technology company known for its innovative contributions to the electronics industry. With his expertise in semiconductor technology, Uenoyama has played a pivotal role in driving technological advancements and shaping the future of the semiconductor industry.

Collaborations:

Throughout his career, Uenoyama has collaborated closely with esteemed colleagues such as Satoshi Kamiyama and Isao Kidoguchi. Together, they have worked on cutting-edge projects and research initiatives that have led to the development of groundbreaking semiconductor technologies. Uenoyama's collaborative spirit and teamwork have been instrumental in achieving success in the fiercely competitive field of technology innovation.

Conclusion:

In conclusion, Takeshi Uenoyama stands as a true visionary in the realm of semiconductor technology, with his relentless pursuit of innovation and his remarkable contributions revolutionizing the way we perceive and utilize semiconductor devices. His groundbreaking patents, coupled with his extensive career highlights and fruitful collaborations, solidify Uenoyama's position as a trailblazer in the world of technology and a driving force behind the advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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