The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Jul. 23, 2003
Toshiya Yokogawa, Nara, JP;
Kunimasa Takahashi, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Makoto Kitabatake, Nara, JP;
Takeshi Uenoyama, Kyoto, JP;
Toshiya Yokogawa, Nara, JP;
Kunimasa Takahashi, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Makoto Kitabatake, Nara, JP;
Takeshi Uenoyama, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An active regionis formed on a substrate, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layerswith a thickness of for example about 50 nm and n-type doped layerswith a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layersfrom sub-bands of the n-type doped layersthat occur due to quantum effects. In the undoped layers, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active regionhas become depleted, a large withstand voltage value can be obtained due to the undoped layersby taking advantage of the fact that there are no more carriers in the active region
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile