Misfet

Abstract

P-type active region ; n-type source/drain regions and gate insulating film made of a thermal oxide film; gate electrode source/drain electrodes and are provided over a p-type SiC substrate In the active region p-type heavily doped layers which are thin enough to create a quantum effect, and thick undoped layers are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.