The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Nov. 06, 2001
Satoshi Kamiyama, Sanda, JP;
Masakatsu Suzuki, Katano, JP;
Takeshi Uenoyama, Kyoto, JP;
Kiyoshi Ohnaka, Moriguchi, JP;
Akira Takamori, Suita, JP;
Masaya Mannoh, Hirakata, JP;
Isao Kidoguchi, Mino, JP;
Hideto Adachi, Mino, JP;
Akihiko Ishibashi, Sakai, JP;
Toshiya Fukuhisa, Kyoto, JP;
Yasuhito Kumabuchi, Toyonaka, JP;
Satoshi Kamiyama, Sanda, JP;
Masakatsu Suzuki, Katano, JP;
Takeshi Uenoyama, Kyoto, JP;
Kiyoshi Ohnaka, Moriguchi, JP;
Akira Takamori, Suita, JP;
Masaya Mannoh, Hirakata, JP;
Isao Kidoguchi, Mino, JP;
Hideto Adachi, Mino, JP;
Akihiko Ishibashi, Sakai, JP;
Toshiya Fukuhisa, Kyoto, JP;
Yasuhito Kumabuchi, Toyonaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.