The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Aug. 17, 2000
Naoki Kohara, Osaka, JP;
Taisuke Sawada, Osaka, JP;
Masatoshi Kitagawa, Osaka, JP;
Takeshi Uenoyama, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A Pt/Ti film is formed on a substrate, and the Pt/Ti film is patterned in to a bottom electrode. Subsequently, a SrTiO film, that is, a dielectric film, is formed on the substrate by sputtering using a mixture of an Ar gas, an O gas and a N gas as a film forming gas. The SrTiO film is patterned into a capacitor dielectric film formed on the bottom electrode. A top electrode is then formed on the capacitor dielectric film. Since a N gas is used as the film forming gas in addition to an Ar/O gas, a SrTiO film with a high dielectric constant and small leakage can be formed at a low temperature. By using this SrTiO film, a thin film capacitor with high capacitance and good dielectric characteristics can be obtained.