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For the Inventor, By the Inventor

Mie, Japan

Takeo Furuhata

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 48(Granted Patents)


Location History:

  • Yokohama, JP (2004 - 2005)
  • Yokkaichi, JP (2005 - 2006)
  • Mie, JP (2005 - 2010)
  • Hyogo, JP (2011)
  • Takarazuka, JP (2014 - 2016)

Company Filing History:

goldMedal15 out of 52,735 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 2004-2016

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15 patents (USPTO):Explore Patents
1. 9450108 - Nonvolatile semiconductor memory device provided with charge storage layer in memory cell (2016-09-20),
2. 9142685 - Nonvolatile semiconductor memory device provided with charge storage layer in memory cell (2015-09-22),
3. 8742487 - Nonvolatile semiconductor memory device provided with charge storage layer in memory cell (2014-06-03),
4. 8008707 - Nonvolatile semiconductor memory device provided with charge storage layer in memory cell (2011-08-30),
5. 7679127 - Semiconductor device and method of manufacturing the same (2010-03-16),
6. 7598562 - Semiconductor device and method of manufacturing the same (2009-10-06),
7. 7265020 - Semiconductor device with DRAM cell and method of manufacturing the same (2007-09-04),
8. 7126178 - Semiconductor device and its manufacturing method (2006-10-24),
9. 7065469 - Manufacturing apparatus and method for predicting life of a manufacturing apparatus which uses a rotary machine (2006-06-20),
10. 6982198 - Semiconductor device and its manufacturing method (2006-01-03),
11. 6946699 - Semiconductor device and its manufacturing method (2005-09-20),
12. 6898551 - System for predicting life of a rotary machine, method for predicting life of a manufacturing apparatus which uses a rotary machine and a manufacturing apparatus (2005-05-24),
13. 6885972 - Method for predicting life span of rotary machine used in manufacturing apparatus and life predicting system (2005-04-26),
14. 6794713 - Semiconductor device and method of manufacturing the same including a dual layer raised source and drain (2004-09-21),
15. 6713359 - Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC (2004-03-30),
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