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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9450108 B1

PDFFull Text
Date of Patent:
Sep. 20, 2016

Filed:

Apr. 27, 2015

Nonvolatile semiconductor memory device provided with charge storage layer in memory cell

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kazuhiro Matsuo, Yokkaichi, JP;

Masayuki Tanaka, Yokohama, JP;

Takeo Furuhata, Takarazuka, JP;

Koji Nakahara, Ama-gun, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Thomas L Dickey

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 27/115 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/513 (2013.01); H01L 29/7881 (2013.01);
Abstract

A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a silicon-containing portion provided on the first oxygen-containing portion, a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion provided on the first high dielectric insulating portion, a second high dielectric insulating portion provided on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion provided on the second high dielectric insulating portion, and a second film provided on the third oxygen-containing portion.

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Quick Actions:

Matsuo, Kazuhiro. (2016). Nonvolatile semiconductor memory device provided with charge storage layer in memory cell (U.S. Patent No. 9450108). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9450108

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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