The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Apr. 10, 2003
Takeo Furuhata, Mie, JP;
Ichiro Mizushima, Kanagawa, JP;
Akiko Sekihara, Kanagawa, JP;
Motoya Kishida, Kanagawa, JP;
Tsubasa Harada, Kanagawa, JP;
Takashi Nakao, Tokyo, JP;
Takeo Furuhata, Mie, JP;
Ichiro Mizushima, Kanagawa, JP;
Akiko Sekihara, Kanagawa, JP;
Motoya Kishida, Kanagawa, JP;
Tsubasa Harada, Kanagawa, JP;
Takashi Nakao, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.