The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Sep. 05, 2003
Ichiro Mizushima, Yokohama, JP;
Shigehiko Saida, Yokohama, JP;
Takeo Furuhata, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.