The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Aug. 10, 2011
Kazuhiro Matsuo, Yokkaichi, JP;
Masayuki Tanaka, Yokohama, JP;
Takeo Furuhata, Takarazuka, JP;
Koji Nakahara, Ama-gun, JP;
Kazuhiro Matsuo, Yokkaichi, JP;
Masayuki Tanaka, Yokohama, JP;
Takeo Furuhata, Takarazuka, JP;
Koji Nakahara, Ama-gun, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer and including a first high dielectric insulating film which has a higher relative permittivity than a silicon nitride film and a second high dielectric insulating film which has a higher relative permittivity than a silicon nitride film, the first and second high dielectric insulating films being structured so that a silicon oxide film is interposed between them, a control electrode formed on the second insulation layer, a first portion formed between the charge storage layer and the second insulation layer and containing silicon and nitrogen, and a second portion containing silicon and oxygen and located between the charge storage layer and the second insulation layer.