Kawasaki, Japan

Takashi Saiki

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Fujitsu Corporation, Fujitsu Microelectronics Limited, Fujitsu Semiconductor Limited. Active years: 2003-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Saiki. Retrieved from https://idiyas.com/inventor/takashi-saiki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 58.8

Average Co-Inventor Count = 1.9

ph-index = 4

Forward Citations = 46(Granted Patents)


Company Filing History:


Years Active: 2003-2011

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Areas of Expertise:
Field Effect Transistors
Gate Widths
Semiconductor Fabrication
Diffusion Suppression
Notched Gate Electrode
STI Technology
Device Manufacturing
Pad Integration
17 patents (USPTO):Explore Patents

Title: Innovations of Takashi Saiki: Advancements in Field Effect Transistors

Introduction

Takashi Saiki, an accomplished inventor based in Kawasaki, Japan, has made significant contributions to the field of semiconductor technology. With 17 patents to his name, Saiki has focused his work on enhancing the design and fabrication of field effect transistors (FETs), which are essential components in modern electronic devices. His innovative approaches have garnered attention and recognition within the tech industry.

Latest Patents

Saiki's latest patent focuses on a method of fabricating field effect transistors with varying gate widths. This innovative process involves defining four distinct regions on a semiconductor substrate: a narrow NMOS region, a wide NMOS region, a wide PMOS region, and a narrow PMOS region. After constructing a gate insulating film and a polysilicon film on the substrate, n-type impurities are introduced into the polysilicon film within the wide NMOS region. Through precise patterning, gate electrodes are created in all four regions, resulting in an impurity concentration that varies across the gate electrodes. The narrow NMOS region has a lower impurity concentration compared to the wide NMOS region, ultimately enhancing the performance and efficiency of the transistors.

Career Highlights

Throughout his career, Takashi Saiki has worked with prominent companies such as Fujitsu Corporation and Fujitsu Microelectronics Limited. His expertise and pioneering work have positioned him as a leading figure in semiconductor innovation, contributing to advancements that continue to shape the industry.

Collaborations

Saiki has collaborated with notable colleagues, including Hiroyuki Ohta and Hiroyuki Kanata. These partnerships have played a vital role in the development of his technologies, fostering a collaborative environment that encourages innovation and problem-solving.

Conclusion

In summary, Takashi Saiki's work exemplifies the spirit of innovation within the semiconductor industry. His advancements in the fabrication of field effect transistors not only showcase his technical expertise but also highlight the importance of collaboration and inventive thinking. As technology continues to evolve, Saiki's contributions will undoubtedly leave a lasting impact on future developments in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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