The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Oct. 30, 2003
Yuka Hayami, Kawasaki, JP;
Junji OH, Kawasaki, JP;
Takashi Saiki, Kawasaki, JP;
Masataka Kase, Kawasaki, JP;
Yuka Hayami, Kawasaki, JP;
Junji Oh, Kawasaki, JP;
Takashi Saiki, Kawasaki, JP;
Masataka Kase, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device fabrication method comprises the step of forming electrodesin a first element regionand in a second element region; the step of forming a first resist filmwhich is opened in the first element region; the step of forming a first dopant diffused regionwith the first resist filmand the gate electrodeas a mask; the first ashing processing step of ashing the first resist film; the step of forming a sidewall insulation filmover the side wall of the gate electrode; the step of forming a second resist filmwhich is opened in the first element region; the forming a second dopant diffused regionwith the second resist film, the gate electrodeand the sidewall insulation filmas a mask; and the second ashing processing step for ashing the second resist film. The ashing processing period of time in the first ashing processing step is shorter than the ashing processing period of time in the second ashing processing step.