The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Jun. 20, 2003
Youichi Momiyama, Kawasaki, JP;
Kenichi Okabe, Kasugai, JP;
Takashi Saiki, Kawasaki, JP;
Hidenobu Fukutome, Kawasaki, JP;
Youichi Momiyama, Kawasaki, JP;
Kenichi Okabe, Kasugai, JP;
Takashi Saiki, Kawasaki, JP;
Hidenobu Fukutome, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.