Hirakata, Japan

Takashi Kano

This inventor holds 27 USPTO granted patents, primarily in Nitride Semiconductor Devices. Top assignees: Sanyo Electric Co., Ltd., Future Light, LLC. Active years: 1999-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Kano. Retrieved from https://idiyas.com/inventor/takashi-kano

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 51.9

Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 347(Granted Patents)


Location History:

  • Osaka-fu, JP (2002)
  • Ohtsu, JP (1999 - 2011)
  • Hirakata, JP (2001 - 2012)
  • Osaka, JP (2013)

Company Filing History:


Years Active: 1999-2013

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Areas of Expertise:
Nitride-Based Semiconductor
Light-Emitting Device
Semiconductor Laser Device
Fabrication Method
Gallium Nitride
Short Circuit Prevention
Semiconductor Layer
Manufacturing Method
Device Architecture
Film Technology
Nitride Semiconductor Element
27 patents (USPTO):Explore Patents

Title: Innovative Contributions of Takashi Kano in Semiconductor Technology

Introduction

Takashi Kano, a prolific inventor based in Hirakata, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 27 patents, Kano has established himself as a key player in the development of nitride-based semiconductor light-emitting devices.

Latest Patents

Among his latest patents is a method of fabricating a nitride-based semiconductor light-emitting device and the device itself. This invention focuses on improving the characteristics and yield of nitride-based semiconductor light-emitting devices. The method involves forming a groove portion on a nitride-based semiconductor substrate through the selective removal of a specific region, allowing for the creation of a semiconductor layer with a different composition that enhances performance. Another essential patent details a semiconductor device comprising a substrate made from at least two group III elements and nitrogen, along with an active layer formed on its surface. The nitride semiconductor layer is designed to optimize the overall functionality of the device.

Career Highlights

Kano's career has seen him collaborate with notable companies in the industry, including Sanyo Electric Co., Ltd. and Future Light, LLC. His work in these organizations has contributed significantly to advancing technology in the semiconductor field, particularly in the context of light-emitting applications.

Collaborations

Throughout his career, Takashi Kano has worked alongside esteemed colleagues such as Yasuhiko Nomura and Masayuki Hata. These collaborations have enabled the exchange of ideas and innovative approaches to problem-solving within the semiconductor industry.

Conclusion

In conclusion, Takashi Kano's contributions to semiconductor innovation through his numerous patents highlight his commitment to advancing technology. His work not only enhances the efficiency of light-emitting devices but also sets the stage for future developments in the field. As technology continues to evolve, Kano's innovations will undoubtedly play a significant role in shaping the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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