Sanyo Electric Co., Ltd.

Future Light, LLC

Takashi Kano

Yasuhiko Nomura

Masayuki Hata

Nobuhiko Hayashi

Hiroki Ohbo

Tsutomu Yamaguchi

Tatsuya Kunisato

Hiroaki Izu

Yasuhiko Matsushita

Katsumi Yagi

Yasuhiro Ueda

Masayuki Shono

Daijiro Inoue

Takenori Goto

Kunio Takeuchi

A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device

A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

Semiconductor device

A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Semiconductor laser device and method of fabricating the same

A GaN layer is grown on a sapphire substrate, an SiOfilm is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiOfilm using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiOfilm, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiOfilm, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

[object Object]

A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

Manufacturing method of light emitting device

Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

Manufacturing method of nitride semiconductor device and nitride semiconductor device

Nitride based semiconductor device with film for preventing short circuiting

A nitride-based semiconductor light-emitting device capable of improving luminous efficiency by reducing light absorption loss in a contact layer is provided. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an active layer, formed on the first nitride-based semiconductor layer, consisting of a nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the active layer, an undoped contact layer formed on the second nitride-based semiconductor layer and an electrode formed on the undoped contact layer.

Nitride-based semiconductor light-emitting device

A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

Nitride-based semiconductor laser device

Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer

A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material, an n-type cladding layer formed on the substrate, an active layer consisting of a nitride-based semiconductor formed on the n-type cladding layer, a p-type cladding layer formed on the active layer and a light guide layer formed only between the active layer and the p-type cladding layer in the interspaces between the active layer and the n- and p-type cladding layers.

Growing community of inventors

Hirakata, Japan

Takashi Kano